2003. 7. 24 1/3 semiconductor technical data kta1704 epitaxial planar pnp transistor revision no : 4 audio frequency power amplifier high frequency power amplifier features complementary to ktc2803. maximum rating (ta=25 ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.2 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 2.3 0.1 0.65 0.15 1.6 3.4 max b 1 23 + _ + _ + _ 15.50 0.5 + _ + _ + _ electrical characteristics (ta=25 ) (note) : h fe (1) classification y:100 200, gr:160 320 characteristic symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current dc i c -1.2 a pulse (note1) i cp -2.5 base current i b -0.3 a collector power dissipation ta=25 p c 1.5 w tc=25 20 junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut of current i cbo v cb =-50v, i e =0 - - -1 a emitter cut of current i ebo v eb =-4v, i c =0 - - -1 a collector-base breakdown voltage v (br)cbo i c =-10 a, i e =0 -120 - - v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -120 - - v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 - - v dc current gain h fe (1) note v ce =-5v, i c =-50ma 100 - 320 h fe (2) v ce =-5v, i c =-500ma 20 - - gain bandwidth product f t v ce =-10v, i c =-50ma - 110 - mhz output capacitance c ob v cb =-10v, i e =0, f=1mhz - 30 - pf collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - -0.15 -0.4 v base-emitter saturation voltage v be(sat) i c =-500ma, i b =-50ma - -0.85 -1.2 v note 1 : pulse width 10ms, duty cycle 50%
2003. 7. 24 2/3 kta1704 revision no : 4 dc current gain h 1 fe -0.001 collector current i (a) c h - i v - i , v - i c collector current i (a) -0.001 -0.01 be(sat) saturation voltage collector-emitter voltage v (v) collector current i (a) 0 0 c ce i - v c ce -10 -20 -30 -40 -50 -60 -0.2 -0.4 -0.6 -0.8 -1.0 common emitter ta=25 c i =-1ma b -10ma -9ma -8ma -7ma -6ma -5ma -4ma -2ma -3ma fe c -0.01 -0.1 -1 -10 3 5 10 30 50 100 300 500 1k common emitter ta=25 c v =5v ce ce(sat) c be(sat) c v ,v (v) ce(sat) -0.01 -0.1 -1 -10 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 common emitter ta=25 c v be(sat) v ce(sat) i /i =5 c b transition frequency f (mhz) 1 t -0.01 collector current i (a) c f - i c - v cb collector-base voltage v (v) -1 -3 ob(pf) 1 output capacitance c ob cb i =0 f=1mhz tc=25 c e -10 -30 -100 -300 -1 k 3 10 30 50 100 300 500 600 tc -0.3 0.1 -0.3 -1 3 5 10 30 50 100 300 500 1k common emitter v =5v tc=25 c ce
2003. 7. 24 3/3 kta1704 revision no : 4 cellector power dissipation p (w) 0 c 0 ambient temperature ta ( c) pc - ta collector-emitter voltage v (v) safe operating area collector current i (a) -1 -0.01 c ce -3 -10 -30 -100 -300 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 single nonrepetive pulse tc=25 c curves must be dreated linearly with increase in temperature * i max.(pulse) c * c i max. (continuous) 100 s 1ms 10ms dc operation ta=25 c 50 100 150 200 4 8 12 16 20 24 28 32 * * *
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